CGD914MI 데이터 시트보기 (PDF) - NXP Semiconductors.
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CGD914MI Datasheet PDF : 14 Pages
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NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
CGD914; CGD914MI
−60
handbook, halfpage
CTB
(dB)
−70
MCD980
48
Vo
(dBmV)
(1)
44
(2)
−80
(3)
40
(4)
−90
0
36
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.6 Composite triple beat as a function of
frequency under flat conditions.
−60
handbook, halfpage
Xmod
(dB)
−70
−80
MCD981
48
Vo
(dBmV)
(1)
44
(2)
40
−90
0
(3)
(4)
36
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.7 Cross modulation as a function of frequency
under flat conditions.
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
MCD982
48
(1)
(2)
Vo
(dBmV)
44
(3)
40
(4)
36
handboo−k,5h0alfpage
CSO
(dB)
(2)
−60
(3)
(4)
−70
−80
MCD983
48
Vo
(dBmV)
(1) 44
40
36
−90
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.8 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
−90
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.9 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
2001 Nov 01
6
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