2SC3169 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
2SC3169 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioauati, Ona.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3169
DESCRIPTION
• Collector-Emiiter Sustaining Voltage-'
: VCEO<SUS)= 400V(Min.)
• Low Collector Saturation Voltage
: VCE(sat)=1.0V(Max.)@lc=1A
• High Speed Switching
APPLICATIONS
• Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
2
A
I CM
Collector Current-Peak
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25'C
T, ' Junction Temperature
4
A
2
W
25
150
"C
Tstg
Storage Temperature Range
-55-150 'C
ii'
_^—„. |
— Ci
t
A
i
k
K
r*
*
3.
PIN l.BASE
2. COLLECTOR
3. EMITTER
TO-220Fa package
•—
,-F
i
— R '^^
^-
mm
DIM WIN
A 16.85
B 9.90
C 4.35
D 0.75
F 3.20
G 6.90
H 5.15
J 0.45
K 13.35
L 1.10
N 4.93
Q 4.35
R 2.95
S 2.70
U 1.75
V 1.30
MAX
17.15
10.10
4.65
0.80
3.40
7.10
5.45
0.75
13.65
1.30
5,18
5.15
3.25
2.90
2.05
1.50
N.I Semi-Contluctors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
mniee. Information furnished hy N.I Scmi-Conductors is believed to be both accurate and reliable at the time of goinu
tt> press, llnuever. N.I Semi-Condiictors assumes no responsibility for any errors or omissions discovered in its use."
induci ors ciicmiraafies customers to \crily that datasheet >; are eurrenl be It ire placing orders.
Qualify Semi-Conductors
Share Link: 