C4115S 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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C4115S

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SC4115S

2SC4115S D FEATURES

TRANSISTOR (NPN)

T Power dissipation

.,L PD:

0.3 W (Tamb=25℃)

Collector current

O I CM:

Collector-base voltage

3A

C V(BR)CBO:

40 V

Operating and storage junction temperature range

IC TJ, Tstg: -55℃ to +150℃

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

O Collector-base breakdown voltage

R Collector-emitter breakdown voltage

T Emitter-base breakdown voltage

Collector cut-off current

C Emitter cut-off current

E DC current gain

L Collector-emitter saturation voltage*

E Transition frequency

z Measured Using Pulse Current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCEsat

fT

Test conditions

Ic= 50µA , IE=0

IC= 1 mA , IB=0

IE=50µA, IC=0

VCB=30V , IE=0

VEB= 5V , IC=0

VCE=2 V, IC= 0.1A

IC= 2A, IB=0.1A

VCE=2V, IC=0.5 A

F=100MHz

MIN TYP

40

20

6

120

200

MAX

0.1

0.1

560

0.5

UNIT

V

V

V

µA

µA

V

MHz

J CLASSIFICATION OF hFE

ERank

WRange

Q

120-270

R

180-390

S

270-560

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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