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74V1T66(2001) 데이터 시트보기 (PDF) - STMicroelectronics

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74V1T66
(Rev.:2001)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
74V1T66 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
74V1T66
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
CI/O Output
Capacitance
CPD Power Dissipation
Capacitance
(note 1)
3 10
10
10 pF
10
pF
3
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA = 25°C)
Test Condition
Symbol Parameter
VCC VIN
(V) (Vp-p)
Sine Wave
5.0(*) 4
Distortion (THD)
fMAX
Frequency
Response
(Switch ON)
5.0(*)
Feed through
Attenuation
(Switch OFF)
5.0(*)
Crosstalk (Control 5.0(*)
Input to Signal
Output)
fIN = 1 KHz RL = 10 K, CL = 50 pF
Adjust fIN voltage to obtain 0 dBm at VOS.
Increase fIN Frequency until dB meter reads -3dB
RL = 50, CL = 10 pF
VIN is centered at VCC/2
Adjust fIN Voltage to obtained 0dBm at VIS
RL = 600, CL = 50 pF, fIN = 1KHz sine wave
RL = 600, CL = 50 pF, fIN = 1KHz square wave
tr = tf = 6ns
(*) Voltage range is 5.0V ± 0.5V
Value
Unit
Typ.
0.04 %
180 MHz
-60 dB
60 mV
4/11

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