2SC2429 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
2SC2429 Datasheet PDF : 2 Pages
| |||
Silicon NPN Power Transistor
2SC2429
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustainig Voltage , lc= 50mA; RBE= ">
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
lE=1mA;lc=0
7
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 10A;IB=2A
VsE(sat) Base-Emitter Saturation Voltage
lc= 10A;IB=2A
hFE
DC Current Gain
lc=10A;VCE=5V
1.0
V
2.0
V
10
40
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0 •
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
0.1
mA
fj
Current-Gain—Bandwidth Product lc=2A;VcE= 10V; f= 10MHz
35
MHz
COB
Output Capacitance
Switching Times
|E=0;VCB=10V;f,est= 1.0MHz
230
PF
tr
Rise Time
*stg
Storage Time
IC=10A;IB1=-IB2=2A;
VCC=150V
tf
Fall Time
^Pulsed: Pulsed width<300Us,Duty ratio<6%
0.5
Ps
2,5
Ps
0.3
Ps
Share Link: 