2SC2834 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC2834 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=10mA; IB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VeE(sat) Base-Emitter Saturation Voltage
lc= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
hpE-1 DC Current Gain
VEB= 5V; lc= 0
lc=0.1A;VCE=5V
hpE-2
DC Current Gain
fl
Current-Gain—Bandwidth Product
lc= 5A; VCE= 5V
lc=0.5A;VcE=10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 5A, IB1= -IB2= 1A;
Vcc= 200V
2SC2834
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1
mA
0.1
mA
15
8
3.5
MHz
1.0
Ms
2.5
Ms
1.0
Ms
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