2N5814 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N5814 Datasheet PDF : 1 Pages
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<3s.mi-Conau.ckoi Lptoauct:d, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N5814 2N5816 2N5818 NPN
2N5815 2N5817 2N5819 PNP
COMPLEMENTARY SILICON
TRANSISTORS
TO-92-18R CASE
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS (TA=>25°C unless otherwise noted)
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage VCES
Collector Emitter Voltage VCEO
Emitter Base Voltage
Col lector Current
VEBO
Collector Current (PEAK)
•CM
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
TJ.Tstg
50
50
40
5.0
750
1000
625
1500
-65 TO +150
ELECTRICAL CHARACTER 1ST ICS(TA~25°C unless otherwise noted)
SYMBOL
'CBO
'CBO
'EBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hFE
fT
fj
fj
cob
Cib
TEST CONDITIONS
VcB=^bV
MIN
MAX
lory
VCB=25V, TA=100°C
VEB=S.OV
15
10
!C=10yA
50
lc=10mA
40
!E=10yA
5.0
lc=500mA, !B=50mA
0.75
IC=500mA, !B=50mA
1.2
VCE-2.0V, lc=500mA
0.60
1.1
VCE=2.0V, lC=2.0mA(2N58l4,2N58l5)
VCE=2.0V, IC-2.0mA(2N58l6,2N58l7)
60
120
100
200
VCE=2.0V, lc-2.0mA(2N58l8,2N58l9)
150
300
VcE=2.0V, lc=500mA(2N58l4,2N58l5)
VCE=2.0V, lc=500mA(2N58l6,2N58l7)
20
25
--
VCE=2.0V, lc=500mA(2N58l8,2N58l9)
25
-
VCE=2.0V, lc=50mA, f=20MHz(2N58l4,2N58l5) 100
VCE=2.0V, lc=50mA, f=20MHz(2N58l6,2N58l7) 120
VCE=2.0V, lc=50mA, f=20MHz(2N58l8,2N58l9) 135
VCB=10V, f=1.0MHz
15
VEB=0.5V, f=1.0MHz
55
UNIT
V
V
V
V
mA
mA
mW
mW
MHz
MHz
MHz
PF
NJ Semi-Conductors reserves the right to change test conditions, parameters limitsand package dimensions without
notice information rumished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
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