IRFN150SMD 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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IRFN150SMD Datasheet PDF : 2 Pages
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SEME
LAB
IRFN150SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 1
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 19A
ID = 27A
ID = 250mA
IDS = 19A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 27A
VDS = 0.5BVDSS
ID = 27A
VDS = 0.5BVDSS
VDD = 50V
ID = 27A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn–On Time
IS = 27A
TJ = 25°C
VGS = 0
IF = 27A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from centre of drain pad to die)
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min. Typ. Max. Unit
100
V
0.13
V/°C
0.070 W
0.081
2
4
V
9
S((WW)
25
mA
250
100
nA
–100
3700
1100
pF
200
50
125 nC
8
22
nC
15
65
35
190
ns
170
130
27
A
108
1.8
V
500 ns
2.9 mC
Negligible
0.8
nH
2.8
Prelim.7/00
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