IXGR35N120BD1 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXGR35N120BD1 Datasheet PDF : 2 Pages
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Advanced Technical Information
High Voltage IGBT
with Diode
(Electrically Isolated Back Surface)
IXGR 35N120BD1
VCES
IC25
VCE(sat)
tfi(typ)
= 1200 V
= 54 A
= 3.5 V
= 160 ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 10 Ω
Clamped inductive load
TC = 25°C
50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
1200
V
1200
V
±20
V
±30
V
54
A
28
A
8
A
200
A
ICM = 120
A
@0.8 VCES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
Mounting force
22...130/5...29
N/lb
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
6
g
ISOPLUS247 (IXGR)
G
C
E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Electrically
Isolated
Features
z Silicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VGE(th)
IC = 250 µA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 35A, VGE = 15 V
Note 2
T=25°C
T=125°C
Characteristic Values
min. typ. max.
2.5
5.0 V
50 µA
250 µA
±100 nA
2.8 3.5 V
Advantages
z Saves space (two devices in one
package)
z Easy to mount
z Reduces assembly time and cost
© 2004 IXYS All rights reserved
DS99204(09/04)
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