F1S60P03 데이터 시트보기 (PDF) - Harris Semiconductor
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F1S60P03 Datasheet PDF : 6 Pages
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RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves
-500
-100
TC = +25oC
100µs
1ms
-10
-1
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS MAX = -30V
10ms
100ms
DC
-10
-60
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1. SAFE OPERATING AREA CURVE
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-2
10-1
100
101
t , RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
-70
-60
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
TC , CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
-103
VGS = -20V
TC = +25oC
FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
=
I25
1----7---5-1---5-–--0--T----C---
VGS = -10V
-102
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-50
10-6 10-5 10-4
10-3
10-2
10-1 100
101
t , PULSE WIDTH (ms)
FIGURE 4. PEAK CURRENT CAPABILITY
-120
VGS = -20V
-90
PULSE DURATION = 250µs, TC = +25oC
VGS = -10V
VGS = -8V
-60
VGS = -7V
-30
0
0.0
VGS = -4.5V
VGS = -6V
VGS = -5V
-1.5
-3.0
-4.5
-6.0
-7.5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
-120
-90
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-60
VDD = -15V
-55oC
+25oC
+175oC
-30
0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
VGS , GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
4-53
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