BZW03C12-TAP 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BZW03C12-TAP Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
BZW03-Series
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Applications
Voltage regulators and transient suppression circuits
Mechanical Data
Case: SOD-64 Sintered glass case
Weight: approx. 858 mg
Packaging Codes/Options:
TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box
TR/2.5k 10 "reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
I = 10mm, TL = 25°C
MjiSS
6.0
W
Tamb = 45°C
Pdiss
1.85
W
Repetitive peak reverse power
dissipation
PZRM
20
W
Non repetitive peak surge power tp=100nS,Tj = 25°C
PZSM
1000
W
dissipation
Junction temperature
Storage temperature range
Ti
175
°C
Tstg
-65to+ 175
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction ambient I = 25 mm, TL = constant
RthJA
30
K/W
on PC board with spacing 37.5 rnm
RthJA
70
K/W
Electrical Characteristics
Tamb =25 °c> unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 1 A
Symbol
Win
Typ.
Max
Unit
VF
1.2
V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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