MMBT5401WT1G(2017) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT5401WT1G Datasheet PDF : 6 Pages
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MMBT5401W
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR− 5 Board (Note 2)
TA = 25°C
Derate Above 25°C
PD
400
mW
3.2
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
312
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
1. FR−5 @ 100 mm2, 0.5 oz. copper traces, still air.
2. FR− 5 = 1.0 0.75 0.062 in.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
4W MG
G
1
4W = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping†
MMBT5401WT1G,
SC−70 3000 / Tape &
NSVMMBT5401WT1G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
December, 2017 − Rev. 3
Publication Order Number:
MMBT5401W/D
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