FMMT597 데이터 시트보기 (PDF) - TY Semiconductor

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FMMT597

High Voltage Transistor

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

Collector-Emitter Cut-Off Current

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

Static Forward Current Transfer Ratio

Current-gain-bandwidth product

Output capacitance

* Pulse test: tp = 300 ìs; d 0.02.

Marking

Marking

597

Symbol

Testconditons

V(BR)CBO IC=-100ìA

V(BR)CEO IC=-10mA

V(BR)EBO IE=-100ìA

ICBO VCB=-250V

ICES

IEBO

VCE=-250V

VEB=-4V

VCE(sat) IC=-50mA, IB=-5mA

IC=-100mA, IB=-20mA

VBE(sat) IC=-100mA, IB=-20mA

VBE(ON) IC=-100mA,VCE=-10V

IC=-1mA,VCE=-10V

hFE IC=-50mA,VCE=-10V *

IC=-100mA,VCE=-10V *

fT IC=-50mA,VCE=-10V,f=100MHz

Cobo VCB=-10V,f=1MHz

Transistors

Product specification

FMMT597

Min Typ Max Unit

-300

V

-300

V

-5

V

-100 nA

-100 nA

-100 nA

-0.25 V

-0.25 V

-1.0 V

-0.85 V

100

100

300

100

75

MHz

10 pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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