1N4448W-V(2005) 데이터 시트보기 (PDF) - Vishay Semiconductors
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1N4448W-V Datasheet PDF : 6 Pages
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Small Signal Fast Switching Diode
1N4448W-V
Vishay Semiconductors
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
e3
• This diode is also available in other
case styles including the DO-35 case with the type
designation 1N4448, the MiniMELF case with the
type designation LL4448, and the SOT-23 case
with the type designation IMBD4448
17431
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4448W-V
Ordering code
1N4448W-V-GS18 or 1N4448W-V-GS08
Type Marking
A3
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
75
V
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
f ≥ 50 Hz
VRM
100
V
IF(AV)
1501)
mA
Surge current
Power dissipation
t < 1 s and Tj = 25 °C
IFSM
500
mA
Ptot
5001)
mW
1) Valid provided that electrodes are kept at ambient temperature.
Document Number 85722
Rev. 1.3, 12-Dec-05
www.vishay.com
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