OP552D 데이터 시트보기 (PDF) - TT Electronics.

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OP552D

NPN Silicon Phototransistor

TT Electronics. 

OP550, OP552, OP555, OP560, OP565,

OP750 Series

OP550, OP552, OP560, OP750, OP770 (A, B, C, D)

OP555, OP565 (A, B, C, D)

[MILLIMETERS]

DIMENSIONS ARE IN:

INCHES

[MILLIMETERS]

DIMENSIONS ARE IN:

INCHES

2

1

Pin #

1

2

Sensor

Emitter

Collector

OP555 - CONTAINS POLYSULFONE

To avoid stress cracking, we suggest using

ND Industries’ Vibra-Tite for thread-locking.

Vibra-Tite evaporates fast without causing structural failure in

OPTEK'S molded plastics.

Notes:

1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum 20 grams force may be applied

to the leads when soldering.

2. For OP550, OP560, OP555 and OP565, derate linearly 1.33 mW/° C above 25° C. For OP552, derate linearly 1.25 mW/° C above 25° C.

3. For all phototransistors in this series, the light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm. For OP550 and

OP555 only, a radiometric intensity level that varies less than 10% over the entire lens surface of the phototransistor being tested applies.

4.

To

calculate

typical

collector

dark

current

in

µA,

use

the

formula

ICEO=10

(0.040

T

A

-

3.4),

where

TA

is

ambient

temperature

in

°C.

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

© TT electronics plc

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Issue A 08/2016 Page 2

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