LB1205 데이터 시트보기 (PDF) - ON Semiconductor

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LB1205

High-Voltage, Large-Current Darlington Driver

ON Semiconductor 

LB1205

Electrical Characteristics at Ta  25C, VDD = 5V

Parameter

Symbol

Conditions

Output saturation voltage

Output sustain voltage

Input current

Spark killer diode forward voltage

Spark killer diode reverse current

VOsat1

VOsat2

VOsat3

VOsus

IIN

VFS

IRS

VIN = VDD-5.0V, IO = 0.5A

VIN = VDD-5.0V, IO = 1.0A

VIN = VDD-5.0V, IO = 1.5A

IO = 100mA

VDD = 7.0V, VIN = VDD-7.0V

IFS = 1.5A

VCC = 62V, VO = 0V

Ratings

min

typ

65

Unit

max

1.2

V

1.5

V

2.0

V

V

1.0 mA

3.0

V

30 A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Package Dimensions

unit : mm

PDIP16 FUSED LEADS / DIP16F (300 mil)

CASE 646AQ

ISSUE O

Pd max -- Ta

3.0

Mounted on the recommended PCB

2.6

2.5

2.0 Independent IC

1.9

1.5

1.56

1.14

1.0

0.5

0

-20

0

20

40

60

75 80

100

Ambient temperature, Ta -- °C

No.1831-2/4

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