FDS3672(2003) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3672 Datasheet PDF : 11 Pages
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March 2003
FDS3672
N-Channel PowerTrench® MOSFET
100V, 7.5A, 22mΩ
Features
• rDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82763
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS3672
Device
FDS3672
Package
SO-8
Reel Size
330mm
5
4
6
3
7
2
8
1
Ratings
100
±20
7.5
4.8
Figure 4
416
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
50
oC/W
85
oC/W
25
oC/W
Tape Width
12mm
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
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