FDS3672(2003) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS3672 Datasheet PDF : 11 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
300
10µs
30
If R = 0
100
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100µs
10
10
1
0.1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1ms
10ms
100ms
1s
0.1
1.0
10.0
100 300
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
20
TJ = 150oC
30
VGS = 10V
20
VGS = 6V
VGS = 5V
10
TJ = 25oC
TJ = -55oC
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
24
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 6V
22
VGS = 4.5V
10
0
0
TA = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
20
VGS = 10V
18
0
2
4
6
8
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
1.0
0.5
-80
VGS = 10V, ID = 7.5A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
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