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FDS7766

30V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

March 2003

FDS7766

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low RDS(ON) in a small package.

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 17 A, 30 V

RDS(ON) = 5 mΩ @ VGS = 10 V

RDS(ON) = 6 mΩ @ VGS = 4.5 V

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

• Fast switching

D

D

D

D

SO-8

G

SS

S

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7766

FDS7766

13’’

5

6

7

8

Ratings

30

±16

17

60

2.5

1.2

1.0

–55 to +150

50

125

25

Tape width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

°C/W

Quantity

2500 units

2003 Fairchild Semiconductor Corporation

FDS7766 Rev E (W)

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