FDS7764A 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS7764A

30V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

August 2000

PRELIMINARY

FDS7764A

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low RDS(ON) in a small package.

Applications

• Synchronous Rectifier

• DC/DC converter

Features

• 15 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 4.5 V

• High performance trench technology for extremely

low RDS(ON) High power and current handling

capability

DD

D

D

SO-8

S SSG

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

PD

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7764A

FDS7764A

13’’

5

6

7

8

Ratings

30

±12

15

50

2.5

1.2

1.0

-55 to +150

50

50 (10 sec)

30

Tape width

12mm

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

°C/W

Quantity

2500 units

2000 Fairchild Semiconductor Corporation

FDS7764A Rev B1(W)

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