FDFS2P103A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDFS2P103A Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = –250 µA
–30
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA,
Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
IGSS
Gate–Body Leakage
VGS = ±25 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS,
ID = –250 µA
–1
ID = –250 µA,
Referenced to 25°C
VGS = –10 V, ID = –5.3 A
VGS = –4.5 V, ID = –4 A
VGS=–10 V, ID = –5.3A, TJ=125°C
VDS = –5V,
ID = –5.3 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
VDS = –15 V, ID = –5.3 A,
VGS = –5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
Schottky Diode Characteristics
IR
Reverse Leakage
VF
Forward Voltage
VR = 30 V
IF = 0.1A
IF = 1A
IF = 3A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
–22
–1
±100
–1.8 –3
4.2
50 59
76 92
68 88
8.9
535
135
75
4.7
11 21
16 28
15 26
10 19
5.7
8
1.8
2.4
–1.3
–0.8 –1.2
160 500
225 280
80 250
305 350
185 250
380 420
V
mV/°C
µA
nA
V
mV/°C
mΩ
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
A
V
µA
mV
mV
mV
mV
mV
FDFS2P103A Rev C (W)
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