KSA910 데이터 시트보기 (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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KSA910

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

KSA910

WEJ ELECTRONIC CO.,LTD KSA910 TRANSISTOR(PNP)

FEATURES

Power dissipation

PCM:

0.8

W (Tamb=25℃)

Collector current

ICM:

-0.05 A

Collector-base voltage

V(BR)CBO:

-150

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Collector-base breakdown voltage

V(BR)CBO

Collector-emitter breakdown voltage V(BR)CEO

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

DC current gain

hFE

Collector-emitter saturation voltage

VCE(sat)

Transition frequency

fT

Test conditions

Ic= -100µA , IE=0

IC= -5mA , IB=0

IE= -10µA, IC=0

VCB= -150V , IE=0

VCE=-5V, IC= -10mA

IC= -10mA, IB= -1 mA

VCE=-30V, IC= -10mA

MIN

-150

-150

-5

40

80

TYP

MAX

-0.1

240

-0.8

UNIT

V

V

V

µA

V

MHz

CLASSIFICATION OF hFE

Rank

Range

R

40-80

O

70-140

Y

120-240

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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