INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5013
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
16
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.cn
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