KSD5013 데이터 시트보기 (PDF) - Inchange Semiconductor
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KSD5013 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5013
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 6A
IC= 5A , IB1= 1A ; IB2= -2A
RL= 40Ω; VCC= 200V
MIN TYP. MAX UNIT
5.0
V
1.5
V
10 μA
40
130 mA
8
3
MHz
2.0
V
0.4 μs
isc website：www.iscsemi.cn
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