FCX593(2006) 데이터 시트보기 (PDF) - Diodes Incorporated.

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FCX593
(Rev.:2006)

SOT89 Silicon planar high voltage transistor

Diodes Incorporated. 

FCX593

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Base breakdown voltages

Cut-off currents

Saturation voltages

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

ICES

VCE(sat)

Base-emitter turn-on voltage

Static forward current

transfer ratio

VBE(sat)

VBE(on)

hFE

Transition frequency

Output capacitance

fT

COBO

Min.

-120

-100

-5

100

100

100

50

50

Max.

-100

-100

-100

-0.2

-0.3

-1.1

-1

300

5

Unit

V

V

V

nA

nA

nA

V

V

V

V

MHz

pF

Conditions

IC = -100␮A

IC = -10mA (*)

IE = -100␮A

VCB = -100V

VEB = -4V

VCES = -100V

IC = -250mA, IB = -25mA(*)

IC = -250mA, IB = -25mA(*)

IC = -500mA, IB = -50mA(*)

IC = -1mA, IB = -5V(*)

IC = -1mA, VCE = -5V

IC = -250mA, VCE = -5V(*)

IC = -500mA, VCE = -5V(*)

IC = -1A, VCE = -5V(*)

IC = -50mA, VCE = -10V

f = 100MHz

VCB = -10V, f = 1MHz

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%.

Issue 4 - November 2006

2

© Zetex Semiconductors plc 2006

www.zetex.com

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