Die Characteristics
DIE DIMENSIONS:
102 mils x 61 mils x 19 mils
2590µm x 1550µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL:
V-
BACKSIDE FINISH:
Gold, Nickel, Silicon, etc.
Metallization Mask Layout
HA-2420, HA-2425
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
TRANSISTOR COUNT:
78
PROCESS:
Bipolar Dielectric Isolation
+IN IN HA-2420, HA-2425
GND
VOS ADJ
VOS ADJ
HOLD CAP
V-
V+
OUTPUT
10