DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HER151G 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

부품명
상세내역
제조사
HER151G
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd LUGUANG
HER151G Datasheet PDF : 2 Pages
1 2
HER151G-HER158G
1.5 AMP. Glass Passivated High Efficient Rectifiers
DO-15
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Case: Molded plastic DO-15
Epoxy: UL 94V0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260oC/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Mounting position: Any
Weight: 0.40 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HER HER HER HER HER HER HER HER Units
151G 152G 153G 154G 155G 156G 157G 158G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
I(AV)
1.5
A
@TA = 55 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
50
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
VF
1.0
1.3
1.7
V
Maximum DC Reverse Current
@TA=25 oC at Rated DC Blocking Voltage
IR
@ TA=125 oC
Maximum Reverse Recovery Time ( Note 1) Trr
5.0
150
50
uA
uA
75
nS
Typical Junction Capacitance ( Note 2 )
Cj
35
20
pF
Typical Thermal Resistance
RθJA
60
Operating Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
oC/W
oC
oC
Revision:20170701-P1
http://www.lgesemi .com
mail:lge@lgesemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]