HGT5A40N60A4D 데이터 시트보기 (PDF) - Intersil
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HGT5A40N60A4D Datasheet PDF : 9 Pages
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HGT5A40N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)
IEC = 40A
IEC = 40A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
-
27
-
ns
-
20
-
ns
-
185
225
ns
-
55
95
ns
-
400
-
µJ
-
1220 1400
µJ
-
700
800
µJ
-
2.25
2.7
V
-
48
55
ns
-
38
45
ns
-
-
0.2
oC/W
-
-
1
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
80
70
PACKAGE LIMITED
60
VGE = 15V
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225
TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
2-3
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