AM1214-100 데이터 시트보기 (PDF) - STMicroelectronics
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AM1214-100 Datasheet PDF : 3 Pages
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AM1214-100
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 100 W MIN. WITH 6.0 dB GAIN
PRELIMINARY DATA
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-100
BRANDING
1214-100
DESCRIPTION
The AM1214-100 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
AM1214-100 is supplied in the grounded IMPAC™
hermetic metal/ceramic package with internal
input/output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS
Power Dissipation* (TC ≤ 100˚C)
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
270
Unit
W
13.5
A
32
V
250
°C
− 65 to +200
°C
0.55
°C/W
August 1992
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