SBRA401N 데이터 시트보기 (PDF) - ON Semiconductor

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SBRA401N

Surface Mount Schottky Power Rectifier

ON Semiconductor 

MBRA140, NRVBA140

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(At Rated VR, TC = 95°C)

VRRM

40

V

VRWM

VR

IO

A

1.0

Peak Repetitive Forward Current

(At Rated VR, Square Wave, 20 kHz, TC = 100°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFRM

A

2.0

IFSM

A

30

Storage Temperature

Operating Junction Temperature

Voltage Rate of Change

(Rated VR, TJ = 25°C)

ESD Ratings:

Machine Model = C

Human Body Model = 3B

Tstg

TJ

dv/dt

−55 to +150

−55 to +125

10,000

> 400

> 8000

°C

°C

V/ms

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Lead (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 1)

1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.

Symbol

RqJL

RqJA

Value

35

86

Unit

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 2)

VF

TJ = 25°C

TJ = 100°C

V

see Figure 2 for other Values

(IF = 1.0 A)

(IF = 2.0 A)

0.55

0.505

0.71

0.74

Maximum Instantaneous Reverse Current

see Figure 4 for other Values

IR

(VR = 40 V)

(VR = 20 V)

TJ = 25°C

TJ = 100°C

mA

0.5

10

0.1

4.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.

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