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2SK2719(2006) 데이터 시트보기 (PDF) - Toshiba
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제조사
2SK2719
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
Toshiba
2SK2719 Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
20
Common source
VGS
=
10 V
Pulse test
16
12
ID
=
3 A
8
1.5
0.8
4
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
Capacitance – V
DS
2000
1000
Ciss
500
300
100
50
30
Common source
VGS
=
0 V
f
=
1 MHz
10
Tc
=
25°C
Pulse test
5
0.1
0.3
1
3
Coss
Crss
10
30
100
Drain-source voltage V
DS
(V)
2SK2719
I
DR
– V
DS
10
Common source
5
Tc
=
25°C
3
Pulse test
1
0.5
0.3
0.1
0.05
5
0.03
10
3
1
VGS
=
0,
−
1 V
0.01
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
Drain-source voltage V
DS
(V)
V
th
– Tc
5
Common source
VDS
=
10 V
4
ID
=
1 mA
Pulse test
3
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
P
D
– Tc
150
100
50
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic Input/Output Characteristics
500
Common source
20
Tc
=
25°C
ID
=
3 A
400
Pulse test
16
VDS
VDD
=
100 V
300
12
200
400
200
8
100
VGS
4
0
0
0
8
16
24
32
40
Total gate charge Q
g
(nC)
4
2006-11-10
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