HYM368025GS-50 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

HYM368025GS-50

8M x 36-Bit EDO - DRAM Module

Infineon Technologies 

HYM 368025S/GS-50/-60

8M × 36-Bit EDO-Module

DC Characteristics1) (contd’ )

Parameter

Average VCC supply current

during fast page mode

(RAS = VIL, CAS, address cycling,

tPC = tPC min)

-50 version

-60 version

Symbol

ICC4

Limit Values

min.

max.

Unit Test

Condition

–

840

mA 2),3),4)

–

680 mA

Standby VCC supply current

ICC5

(RAS = CAS = VCC – 0.2 V)

Average VCC supply current during CAS- ICC6

before-RAS refresh mode (per bank)

(RAS, CAS cycling, tRC = tRC min)

-50 version

-60 version

–

24

mA

–

1240

mA 2),4)

–

1120 mA

Capacitance

TA = 0 to 70 °C, VCC = 5 V ± 10 %, f = 1 MHz

Parameter

Input capacitance (A0 to A10,WE)

Input capacitance (RAS0 - RAS3)

Input capacitance (CAS0 - CAS3)

I/O capacitance (DQ0-DQ35)

Symbol

CI1

CI2

CI3

CIO

Limit Values

min.

max.

–

180

–

50

–

40

–

25

Unit

pF

pF

pF

pF

Semiconductor Group

6

Share Link: