HM62V8512C 데이터 시트보기 (PDF) - Renesas Electronics

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HM62V8512C

4 M SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62V8512C Series

4 M SRAM (512-kword × 8-bit)

ADE-203-1210D (Z)

Rev. 4.0

Aug. 5, 2002

Description

The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,

higher performance and low power consumption by employing CMOS process technology (6-transistor

memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is

available for high density mounting. The HM62V8512C is suitable for battery backup system.

Features

• Single 3.0 V supply: 2.7 V to 3.6 V

• Access time: 55 ns (max)

• Power dissipation

 Active: 6.0 mW/MHz (typ)

 Standby: 2.4 µW (typ)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly LV-TTL compatible: All inputs

• Battery backup operation

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