LA5724MC 데이터 시트보기 (PDF) - ON Semiconductor
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LA5724MC Datasheet PDF : 6 Pages
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LA5724MC
6. Inductance current: peak value
The ripple current peak value must be held within the rated current values for the inductor used. Here, IRP id the ripple
current. IRP can be determined from the folloeing equation.
IRP
=
IOUT
+
VIN
-
VOUT
2L
-
Vsat
×
Tom
=
0.5
+
12 - 5.0 - 0.4
2 × 120×10-6
×
2.8×10-6
≈ 0.57A
7. Inducrance current: ripple current value
Here ΔIR is the ripple current. ΔIR can be determined from the folloeing equation. If the load current becomes less than
one half the ripple current, the icductor current will become discontinuous.
ΔIR
=
VIN
-
VOUT
L
-
Vsat
×
Tom
=
12 - 5.0 - 0.4
120×10-6
×
2.8×10-6
≈ 0.15A
8. Diode D1
A Schottky barrier diode must be used for the diode. If a fast recovery diode si used, it is possible that the IC could be
destroyed be the applied reverse voltage due to the recovety and the on-state voltage.
9. Diode current: peak current
Applecations must be designed so that the peak value of the diode current remains within the rated current of the diode.
The peak value of the diode current will be the same current as the peak value of the inductor current.
10. Repetitive pwak reverse voltage
Application must be designed so that the repetitive peak reverse voltage remains within the voltage rating og the diode.
Here, VRRM is the repetitive peak reverse voltage. VRRM can be determined from the folloeing equation.
VRRM ≥ VCC
Since moise voltage and other terms will be added in actual in actual operation, the voltage headling caoacity of the
device should be about 1.5 times that given by the above calculation.
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PS No.A2021-6/6
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