RF3100-3 데이터 시트보기 (PDF) - RF Micro Devices
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RF3100-3 Datasheet PDF : 6 Pages
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Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
RF3100-3
3V 1900MHZ LINEAR AMPLIFIER MODULE
• Designed for Compatibility with Qualcomm
Chipsets
2
Product Description
The RF3100-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V hand-held systems. The device
is manufactured on an advanced Gallium Arsenide Het-
erojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3100-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
0.800 sq
typ
1.700
3.000
0.100
4.390
6.0 sq
2.500
NOTE: Nominal thickness, 1.55 mm.
0.600
0.100
Dimensions in mm.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC1 1
7 GND
RF IN 2
6 RF OUT
VREG 3
4
5 VCC2
Package Style: LGM (6mmx6mm)
Features
• Input/Output Internally Matched@50Ω
• Single 3V Supply
• 28dBm Linear Output Power
• -141dBm/Hz Noise Power
• 35% Linear Efficiency
• 45mA Idle Current (Low Power Mode)
Ordering Information
RF3100-3
3V 1900MHz Linear Amplifier Module
RF3100-3 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 011017
2-273
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