BD246 데이터 시트보기 (PDF) - New Jersey Semiconductor

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BD246

Silicon PNP Power Transistor

New Jersey Semiconductor 

\J roducti.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BD246/A/B/C

DESCRIPTION

• Collector Current -lc= -10A

• Collector-Emitter Breakdown Voltage-

: V(BR,CEO = -45V(Min)- BD246; -60V(Min)- BD246A

-80V(Min)- BD246B; -100V(Min)- BD246C

• Complement to Type BD245/A/B/C

APPLICATIONS

• Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

BD246

-55

Collector-Emitter

BD246A

-70

VoEP

Voltage (RBE=100 Q )

BD246B

-90

V

BD246C

-115

BD246

-45

VCEO

Collector-Emitter

Voltage

BD246A

-60

V

BD246B

-80

BD246C -100

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

ICM

Collector Current-Peak

-10

A

-15

A

IB

Base Current

Collector Power Dissipation

@ Ta=25-C

PC

Collector Power Dissipation

@ TC=25"C

Tj

Junction Temperature

Tstg

Storage Temperature Range

-3

A

3

W

80

150

•c

-65-150 •c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

1.56 •c/w

II1

• 23

<!

PIN 1.BASE

2 . COLLECTOR

3. EMITTER

TO-3PN package

•— B —•>

c -»

•

! rf T,

K

0 * *L

mm

HIM WIN MAX

A 19.90 20.10

R 15.50 15JO

C 4.70 4.90

D 0.90 1.10

E 1.90 2.10

F 3.40 3.60

G 2.90 3.10

H 3.20 3.40

J 0.595 0.605

K 20.50 20.70

L 1.90 2.10

N 10.89 10.91

Q 4,90 5.10

K 3,35 3.<< 5

S 1,995 2.0C>5

U .90 ft.'Q

Y 9.90 10.10

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