BDW64 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
BDW64 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW64/A/B/C/D
DESCRIPTION
·Collector Current -IC= -6A
·High DC Current Gain-hFE= 750(Min.)@ IC= -2A
·Complement to Type BDW63/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDW64
-45
VCBO
Collector-Base
Voltage
BDW64A
BDW64B
BDW64C
-60
-80
-100
BDW64D
-120
BDW64
-45
VCEO
Collector-Emitter
Voltage
BDW64A
BDW64B
BDW64C
-60
-80
-100
BDW64D
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-6
IBB
Base Current-Continuous
-0.1
Collector Power Dissipation
PC
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
2
60
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MAX
2.08
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
Share Link: 