BGA2031 데이터 시트보기 (PDF) - NXP Semiconductors.
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BGA2031 Datasheet PDF : 11 Pages
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NXP Semiconductors
MMIC variable gain amplifier
Product specification
BGA2031/1
FEATURES
High gain
Excellent adjacent channel power rejection
Small SMD package
Low dissipation.
APPLICATIONS
General purpose variable gain amplifier for low voltage
and medium power
Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 6-pin SOT363 SMD plastic package for low
voltage medium power applications.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
RFin
CTRL
VS1
VS2 + RFout
GND
GND
handbook, halfpage
6 54
VS1
RFin
1 23
Top view
CTRL
BIAS
CIRCUIT
Marking code: A3
VS2+RFout
GND
MAM440
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS1
VS2
IS
PARAMETER
supply voltage
supply voltage
supply current; pins 3 and 4
PL
ACPR
Gp
G
load power
adjacent channel power rejection
power gain
gain control range
CONDITIONS
VCTRL = 0
VCTRL = 2.7 V; VS = 3 V
VCTRL = 2.4 V; VS = 3 V
at 1 dB gain compression point;
f = 1.9 GHz
f = 1.9 GHz; PL = 10 dBm
f = 836 MHz; PL = 8 dBm
f = 1.9 GHz; PL = 12 dBm
f = 836 MHz; PL = 8 dBm
f = 836 MHz; PL = 8 dBm
TYP.
3
3
0
51
30
13
MAX.
3.3
3.3
10
63
37
UNIT
V
V
A
mA
mA
dBm
49
dBc
48
dBc
23
dB
24
dB
62
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2001 Feb 05
2
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