BLW77 데이터 시트보기 (PDF) - Philips Electronics

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BLW77

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-AB

or class-B operated high power

transmitters in the h.f. and v.h.f.

bands. The transistor presents

excellent performance as a linear

amplifier in the h.f. band. It is

resistance stabilized and is

guaranteed to withstand severe load

mismatch conditions. Transistors are

delivered in matched hFE groups.

The transistor has a 1⁄2" flange

envelope with a ceramic cap. All

leads are isolated from the flange.

Product specification

BLW77

QUICK REFERENCE DATA

R.F. performance up to Th = 25 °C

MODE OF OPERATION VCE

V

s.s.b. (class-AB)

28

c.w. (class-B)

28

Note

1. At 130 W P.E.P.

IC(ZS)

A

0,1

−

f

MHz

1,6 − 28

87,5

PL

W

15 − 130

(P.E.P.)

130

Gp

dB

> 12

typ. 7,5

η

%

> 37,5(1)

typ. 75

d3

dB

< −30

−

PIN CONFIGURATION

handbook, halfpage 4

3

PINNING - SOT121B.

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

1

2

MLA876

Fig.1 Simplified outline. SOT121B.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

August 1986

2

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