BLF1047 데이터 시트보기 (PDF) - Philips Electronics
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BLF1047 Datasheet PDF : 8 Pages
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Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF1047
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT541A
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
handbook, halfpage
1
2
Top view
3
MBK765
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f1 = 960; f2 = 960.1
26
960
26
PL
(W)
70 (PEP)
70
Gp
(dB)
>14
>14
ηD
dim
(%)
(dBc)
>35
≤−26
>45
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02
2
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