BLF1047 데이터 시트보기 (PDF) - Philips Electronics
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BLF1047 Datasheet PDF : 8 Pages
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Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF1047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGS
ID
Tstg
Tj
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
PARAMETER
MIN.
−
−
−
−65
−
MAX.
65
±20
9
+150
200
UNIT
V
V
A
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-h
thermal resistance from junction to heatsink
CONDITIONS
Th = 25 °C, Pdis = 100 W;
note 1
VALUE
1.15
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
IDSX
IGSS
gfs
RDSon
Cis
Cos
Crs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
VGS = 0; ID = 1.4 mA
VDS = 10 V; ID = 140 mA
VGS = 0; VDS = 26 V
VGS = VGSth + 9 V; VDS = 10 V
VGS = ±20 V; VDS = 0
VDS = 10 V; ID = 5 A
VGS = VGSth + 9 V; ID = 5 A
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
VGS = 0; VDS = 26 V; f = 1 MHz
MIN.
65
4
−
20
−
−
−
−
−
−
TYP.
−
−
−
−
−
3
200
75
65
2.5
MAX. UNIT
−
V
5
V
10
µA
−
A
250 nA
−
S
−
mΩ
−
pF
−
pF
−
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified.
MODE OF OPERATION
f
(MHz)
VDS
PL
Gp
ηD
dim
(V)
(W)
(dB)
(%)
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
70 (PEP)
>14
CW, class-AB (1-tone)
960
26
70
>14
>35
≤−26
>45
−
Ruggedness in class-AB operation
The BLF1047 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
2000 Feb 02
3
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