BLW83 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BLW83 Datasheet PDF : 1 Pages
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20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
10 aunt i, One..
BLW83
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
BLW83 is Designed for use
in transmitting amplifiers operatimg in
theh.f. and v.h.f. bands and for
applications as linear amplifier in
class-A and AB.
FEATURES:
• PG = 20 dB min. at 10 W/30 MHz
• IMD3 = -30 dBc max. at 10 W(PEP)
• OmnigoW* Metalization System
MAXIMUM RATINGS
Ic
3.0 A
VCES
65V
VCEO
36V
VEBO
4.0V
PDISS
80 W @ Tc = 25 °C
L
-65 °C to +200 °C
TSTG
-65 °C to +150°C
9jc
2.2 °C/W
PACKAGE STYLE: .3804LFLG
112X45 —
-. ' ""A
^ , \ 0.125NOM
C ..'•'/
— E ''^-
FUL1-R
B '"--^
7
.-'
r>
_
c— -i. J
-*-]
1
f
:^^ 1 TG? I
D|M
A
B
C,
D
E
F
G
H
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MINIMUM
,220/5,59
786/19.94
.720/18.29
.970/24.64
,004/0,10
085/2.16
160/4.06
.240/6.10
MAXIMUM
,230/5,84
730/1854
.980/24.89
385/9.78
006/0 15
105/267
180/4.57
.280/7.11
.255/6.48
I
CHARACTERISTICS
SYMBOL
BVCES
lc= 10mA
BVCEO
lc= 50 mA
BVEBO
IE= 10mA
ICES
VCE = 36 V
hpE
Vce = 5.0 V
TEST CONDITIONS
lc = 1 .25 A
MINIMUM TYPICAL MAXIMUM
65
36
4.0
5
10
100
C0b
VCB= 12.5V
f= 1.0 MHz
100
GpE
VCC = 26V
ICQ = 25mA
f=30MHz
20
21
IMD3
POUT = 10W(PEP)
-30
UNITS
V
V
V
mA
—
PF
dB
dB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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