2SC4382 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4382 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4382
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 200V(Min)
• DC Current Gain-
: hFE= 60(Min)@ (VCE= 10V, lc= 0.7A)
• Complement to Type 2SA1668
APPLICATIONS
• Designed for TV vertical output .audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
lo
Collector Current-Continuous
2
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@T0=25°C
Tj
Junction Temperature
1
A
25
W
150
•c
Tstg
Storage Temperature
-55-150 °C
I
PIN 1.BASE
2. COLLECTOR
123
TO-220F package
-C
R-
0
J --
N-
mm
DIM WIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
Q 2.70
R 2.20
S 2.65
li 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of eoing
lo press. I lowever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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