2SC4382 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4382 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25*C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=25mA;lB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 0.7A; IB= 0.07A
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
hFE
DC Current Gain
COB
Output Capacitance
lc=0.7A;VCE=10V
lE=0;VCB=10V;f=1MH2
fT
Current-Gain—Bandwidth Product
Switching Times
IE=-0.2A;VCE=12V
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
lc=1A;lei=-lB2=0.1A;
Vcc= 20V; RL= 20 Q
2SC4382
MIN TYP. MAX UNIT
200
V
1.0
V
10
uA
10
uA
60
35
PF
15
MHz
1.0
us
3.0
us
1.5
us
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