BPW46 데이터 시트보기 (PDF) - Vishay Semiconductors
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BPW46 Datasheet PDF : 5 Pages
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BPW46
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
IR = 100 μA, E = 0
V(BR)
60
VR = 10 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
VR = 3 V, f = 1 MHz, E = 0
CD
Ee = 1 mW/cm2, = 950 nm
Vo
Ee = 1 mW/cm2, = 950 nm
TKVo
EA = 1 klx
Ik
Ee = 1 mW/cm2, = 950 nm
Ik
Ee = 1 mW/cm2, = 950 nm
TKIk
EA = 1 klx, VR = 5 V
Ira
Ee = 1 mW/cm2, = 950 nm,
VR = 5 V
Ira
40
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
VR = 10 V, = 950 nm
VR = 10 V, RL = 1 k, = 820 nm
VR = 10 V, RL = 1 k, = 820 nm
p
0.1
NEP
tr
tf
TYP.
2
70
25
350
-2.6
70
47
0.1
75
50
± 65
900
430 to 1100
4 x 10-14
100
100
MAX.
30
40
UNIT
V
nA
pF
pF
mV
mV/K
μA
μA
%/K
μA
μA
deg
nm
nm
W/Hz
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1.4
100
10
1
20
94 8403
VR = 10 V
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.8, 03-Jun-14
2
Document Number: 81524
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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