MGSF1N02ELT1 데이터 시트보기 (PDF) - Motorola => Freescale
부품명
상세내역
제조사
MGSF1N02ELT1 Datasheet PDF : 5 Pages
| |||
MGSF1N02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
—
Gate–Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
—
Gate–Source Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
0.5
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.0 A)
(VGS = 2.5 Vdc, ID = 0.75 A)
rDS(on)
—
—
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz)
Ciss
—
Output Capacitance
(VDS = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Coss
—
Transfer Capacitance
(VDG = 5.0 Vdc, VGS = 0 V, f = 1.0 Mhz) Crss
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 5 Vdc, ID = 1.0 Adc,
RL = 5 Ω, RG = 6 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Total Gate Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.0 Vdc)
QT
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
Pulsed Current
Forward Voltage(2) (VGS = 0 Vdc, IS = 0.6 Adc)
ISM
—
VSD
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
—
—
Vdc
µAdc
—
1.0
—
10
—
± 0.1
µAdc
—
1.0
Vdc
Ohms
—
0.085
—
0.115
160
—
pF
130
—
60
—
6.0
—
ns
26
—
117
—
105
—
6500
—
pC
—
0.6
A
—
0.75
—
1.2
V
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
2
TJ = 150°C
1.5
25°C
– 55°C
1
0.5
0
0.5
0.8
1.1
1.4
1.7
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
2
2.5 V
1.8
2.25 V 1.75 V
1.6
2.0 V
1.4
1.2
1.5 V
1
0.8
0.6
0.4
VGS = 1.25 V
0.2
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Share Link: 