BSS123(2015) 데이터 시트보기 (PDF) - Micro Commercial Components

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BSS123
(Rev.:2015)

N-Channel Enhancement Mode Field Effect Transistor

Micro Commercial Components 

BSS123

MCC

TM

Micro Commercial Components

Electrical characteristics (Ta=25Я unless otherwise noted)

Parameter

Symbol

Test Condition

Off characteristics

Drain-source breakdown voltage

V(BR)DSS VGS = 0V, ID =250µA

Gate-body leakage

IGSS

VDS =0V, VGS =±20V

Zero gate voltage drain current

VDS =100V, VGS =0V

IDSS

VDS =20V, VGS =0V

On characteristics

Gate-threshold voltage (note 1)

Static drain-source on-resistance (note 1)

VGS(th)

RDS(on)

VDS =VGS, ID =250µA

VGS =10V, ID =0.17A

VGS =4.5V, ID =0.17A

Forward transconductance (note 1)

gFS

VDS =10V, ID =0.17A

Dynamic characteristics (note 2)

Input capacitance

Output capacitance

Ciss

Coss

VDS =25V,VGS =0V, f=1MHz

Reverse transfer capacitance

Crss

Switching characteristics

Turn-on delay time (note 1,2)

td(on)

Rise time (note 1,2)

Turn-off delay time (note 1,2)

tr

td(off)

VDD=30V, VDS=10V,

ID =2.8A,RGEN=50ȍ

Fall time (note 1,2)

tf

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Drain-source body diode characteristics

VDS=10V,ID=0.22A,

VGS=10V

Body diode forward voltage (note 1)

VSD IS=0.34A, VGS = 0V

Notes :

1.Surface mounted on FR4 board using the minimum recommended pad size.

2. Pulse Test : Pulse width=300μs, duty cycle≤2%.

3. Switching characteristics are independent of operating junction temperature.

4. Graranted by design，not subject to producting.

Min Typ Max Units

100

V

±50

nA

1

µA

10

nA

1.0

80

2.8

V

6

Ÿ

10

mS

29

60

10

15 pF

2

6

8

8

ns

13

16

1.4

2

nC

0.15 0.25 nC

0.2

0.4

nC

1.3

V

Revision: A

www.mccsemi.com

2 of 4

2015/03/13

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