BU204 데이터 시트보기 (PDF) - Inchange Semiconductor

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BU204

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU204

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0

600

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 1A

ICES

Collector Cutoff Current

VCE= 1300V; VBE= 0

5.0

V

1.5

V

1.0 mA

IEBO

Emitter Cutoff Current

VEB= 5.0V ; IC= 0

10

mA

hFE

DC Current Gain

IC= 2A ; VCE= 5V

2

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V; ftest= 1MHz

tf

Fall Time

IC= 2A; IB=B 1A; LB= 25μH

50

pF

4

MHz

0.65

μs

isc Website：www.iscsemi.cn

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