BUK9520-100A 데이터 시트보기 (PDF) - NXP Semiconductors.

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BUK9520-100A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

BUK9520-100A

N-channel TrenchMOS logic level FET

Rev. 02 — 7 February 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant

 Low conduction losses due to low

on-state resistance

 Suitable for logic level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive and general purpose

power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

VDS

ID

Ptot

Quick reference data

Parameter

Conditions

drain-source

voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

drain current

VGS = 5 V; Tmb = 25 °C;

see Figure 1; see Figure 3

total power

dissipation

Tmb = 25 °C; see Figure 2

Min Typ Max Unit

-

-

100 V

-

-

63 A

-

-

200 W

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