BUK9520-100A 데이터 시트보기 (PDF) - NXP Semiconductors.

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BUK9520-100A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

BUK9520-100A

N-channel TrenchMOS logic level FET

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

VDS

VDGR

VGS

ID

Parameter

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

Conditions

Tj ≥ 25 °C; Tj ≤ 175 °C

RGS = 20 Ω

Tmb = 25 °C; VGS = 5 V; see Figure 1;

see Figure 3

IDM

peak drain current

Tmb = 100 °C; VGS = 5 V; see Figure 1

Tmb = 25 °C; pulsed; tp ≤ 10 µs;

see Figure 3

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

VGSM

peak gate-source voltage

Source-drain diode

Tmb = 25 °C; see Figure 2

pulsed; tp ≤ 50 µs

IS

source current

ISM

peak source current

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

Tmb = 25 °C

pulsed; tp ≤ 10 µs; Tmb = 25 °C

ID = 63 A; Vsup ≤ 100 V; RGS = 50 Ω;

VGS = 5 V; Tj(init) = 25 °C; unclamped

120

Ider

(%)

80

03aa24

120

Pder

(%)

80

Min Max Unit

-

100 V

-

100 V

-10 10 V

-

63 A

-

45 A

-

253 A

-

200 W

-55 175 °C

-55 175 °C

-15 15 V

-

63 A

-

253 A

-

420 mJ

03na19

40

40

0

0

50

100

150

200

Tmb (°C)

0

0

50

100

150

200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

BUK9520-100A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 7 February 2011

© NXP B.V. 2011. All rights reserved.

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